Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes-Reference-Cited by-同舟云学术

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Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes

Published:2016-06-10 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Kumar Ashutosh,Heilmann M.,Latzel Michael,Kapoor Raman,Sharma Intu,Göbelt M.,Christiansen Silke H.,Kumar Vikram,Singh Rajendra

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep27553.pdf

Reference59 articles.

1. Kibria, M. G. et al. Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting. Nat. Commun. 5, 3825 (2014).

2. Fang, Z. et al. Si Donor Incorporation in GaN Nanowires. Nano Lett. 15, 6794–6801 (2015).

3. Landré, O. et al. Elastic strain relaxation in GaN/AlN nanowire superlattice. Phys. Rev. B 81, 153306 (2010).

4. Knelangen, M., Consonni, V., Trampert, A. & Riechert, H. In situ analysis of strain relaxation during catalyst-free nucleation and growth of GaN nanowires. Nanotechnology 21, 245705 (2010).

5. Kang, S. et al. Ultraviolet photoconductive devices with an n-GaN nanorod-graphene hybrid structure synthesized by metal-organic chemical vapor deposition. Sci. Rep. 5, 10808 (2015).

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