1/fnoise in thin oxidep‐channel metal–nitride–oxide–silicon transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332248
Reference22 articles.
1. 1/f noise
2. Experimental results on fast surface states and 1/f noise in m.o.s. transistors
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4. Comparison of two noise models in MOSFETs
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