On the Si–SiO2 interface trap time constant distribution in metal-oxide-semiconductor transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1813637
Reference30 articles.
1. A reliable approach to charge-pumping measurements in MOS transistors
2. Rigorous analysis of two-level charge pumping: Application to the extraction of interface trap concentration versus energy profiles in metal–oxide–semiconductor transistors
3. In-depth exploration of Si-SiO/sub 2/ interface traps in MOS transistors using the charge pumping technique
4. Electrical properties of ultrathin RTCVD oxinitride films in n and p-channel MOSFET's
5. THERMAL OXIDATION OF SILICON AND Si-SiO2 INTERFACE MORPHOLOGY, STRUCTURE AND LOCALIZED STATES
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