(Invited) On the Modeling of the Charge Pumping Curves

Abstract

This paper discusses the simulation of the charge pumping (CP) curves of conventional MOSFETs with a thick SiO2 dielectric. After recalling the essential of the model derived to that aim, the most salient features this model implies are pointed out. Then, starting from the results published in (1, 2), the trap characteristics used in these papers are discussed. The simulation of such curves with a single trap type is presented before discussing hole and electron emission times and, as reported here for the first time, the way the energy region over which recombination proceeds varies with gate bias during CP measurements. Finally, two particular situations that may be considered thanks to reliable CP curves simulations are dealt with.