A simultaneous observation of dislocations in 4H-SiC epilayer and n+-substrate by using electron beam induced current
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3597784
Reference15 articles.
1. Silicon Carbide
2. Breakdown degradation associated with elementary screw dislocations in 4H-SiC p+n junction rectifiers
3. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
4. Annealing effects on single Shockley faults in 4H-SiC
5. Dislocation nucleation in 4H silicon carbide epitaxy
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Optoelectronic and structural characterization of trapezoidal defects in 4H-SiC epilayers and the effect on MOSFET reliability;Journal of Applied Physics;2023-08-18
2. Expansion of a single Shockley stacking fault in a 4H-SiC (11 2 ¯0) epitaxial layer caused by electron beam irradiation;Journal of Applied Physics;2018-06-14
3. Expansion of Basal Plane Dislocation in 4H-SiC Epitaxial Layer on A-Plane by Electron Beam Irradiation;Materials Science Forum;2018-06
4. The Effect of Threading Dislocation on Current-Voltage Characteristics of 3.3 kV 4H-SiC Schottky Barrier Diode;ECS Transactions;2018-04-09
5. Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiС under Electron Beam Irradiation;Materials Science Forum;2012-07
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