Expansion of a single Shockley stacking fault in a 4H-SiC (11 2 ¯0) epitaxial layer caused by electron beam irradiation
Author:
Affiliation:
1. Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya 456-8587, Japan
2. Nagoya Institute of Technology, Gokiso-cho, Showa, Nagoya 466-8555, Japan
Funder
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5026448
Reference36 articles.
1. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
2. Dislocation conversion in 4H silicon carbide epitaxy
3. Direct observation of dislocations propagated from 4H–SiC substrate to epitaxial layer by X-ray topography
4. Evolution of basal plane dislocations during 4H-silicon carbide homoepitaxy
5. Short minority carrier lifetimes in highly nitrogen-doped 4H-SiC epilayers for suppression of the stacking fault formation in PiN diodes
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