Direct observation of dislocations propagated from 4H–SiC substrate to epitaxial layer by X-ray topography
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. X-Ray Topographic Studies of Defects in PVT 6H-SiC Substrates and Epitaxial 6H-SiC Thin Films
2. Replication of Defects from 4H-SiC Wafer to Epitaxial Layer
3. Partial dislocations in the X-ray topography of as-grown hexagonal silicon carbide crystals
4. Dislocation conversion in 4H silicon carbide epitaxy
5. White-beam synchrotron topographic studies of defects in 6H-SiC single crystals
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1. 3D structure of threading screw dislocation at a deep location in 4H-SiC using 3D micro-X-ray topography;Japanese Journal of Applied Physics;2024-01-04
2. Charge-transfer interatomic potential to reproduce 30° partial dislocation movements for 4H-SiC in the surface vicinity and its application to BPD-TED conversion;Computational Materials Science;2024-01
3. High‐Quality and Wafer‐Scale Cubic Silicon Carbide Single Crystals;ENERGY & ENVIRONMENTAL MATERIALS;2023-12-10
4. Optoelectronic and structural characterization of trapezoidal defects in 4H-SiC epilayers and the effect on MOSFET reliability;Journal of Applied Physics;2023-08-18
5. Three-dimensional micro-X-ray topography using focused sheet-shaped X-ray beam;Scientific Reports;2023-07-31
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