Direct observation of dislocations propagated from 4H–SiC substrate to epitaxial layer by X-ray topography
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. X-Ray Topographic Studies of Defects in PVT 6H-SiC Substrates and Epitaxial 6H-SiC Thin Films
2. Replication of Defects from 4H-SiC Wafer to Epitaxial Layer
3. Partial dislocations in the X-ray topography of as-grown hexagonal silicon carbide crystals
4. Dislocation conversion in 4H silicon carbide epitaxy
5. White-beam synchrotron topographic studies of defects in 6H-SiC single crystals
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