Replication of Defects from 4H-SiC Wafer to Epitaxial Layer-Reference-Cited by-同舟云学术

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Replication of Defects from 4H-SiC Wafer to Epitaxial Layer

Published:2002-04 Issue: Volume:389-393 Page:447-450
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Ohno Toshiyuki¹,Yamaguchi Hirotaka²,Kojima Kazutoshi³,Nishio Johji⁴,Masahara Koh¹,Ishida Yuuki³,Takahashi Tetsuo⁵,Suzuki Takaya⁵,Yoshida Sadafumi⁶

Affiliation:

1. UPR Ultra-Low-Loss Power Device Technology Research Body

2. National Institute of Advanced Industrial Science and Technology AIST

3. National Institute of Advanced Industrial Science and Technology (AIST)

4. Toshiba Corporation

5. National Institute of Advanced Industrial Science and Technology

6. Saitama University

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.389-393.447.pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review on Modeling and Mitigation of Bipolar Degradation in 4H-SiC;Power Electronic Devices and Components;2024-04

2. Degradation of hexagonal silicon-carbide-based bipolar devices;Journal of Applied Physics;2006-01

3. Improvement of SiC Wafer Warp by Annealing;Materials Science Forum;2004-06

4. Direct observation of dislocations propagated from 4H–SiC substrate to epitaxial layer by X-ray topography;Journal of Crystal Growth;2004-01

5. Influence of 4H-SiC semi-insulating substrate purity on SiC metal-semiconductor field-effect transistor performance;Journal of Electronic Materials;2003-05

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