Annealing effects on single Shockley faults in 4H-SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2234740
Reference19 articles.
1. Y. Sugawara, Proceedings of 15th International Symposium on Power Devices and ICs, Cambridge, United Kingdom, 2003 (IEEE, New York, 2003), p. 10.
2. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
3. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
4. Dislocation evolution in 4H-SiC epitaxial layers
5. In Situ Studies of Structural Instability in Operating 4H-SiC PiN Diodes
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