Machine-learning enhanced thermal stability investigation of single Shockley stacking faults in 4H-SiC-Reference-Cited by-同舟云学术

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Machine-learning enhanced thermal stability investigation of single Shockley stacking faults in 4H-SiC

Published:2024-06 Issue: Volume:242 Page:113077
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Chen Haonan^ORCID,Kang Wenyu^ORCID,Lin Wei^ORCID,Kang Junyong^ORCID

Publisher

Elsevier BV

Reference65 articles.

1. SiC-1SSF-MLFF;Chen,2024

2. Status of silicon carbide (SiC) as a wide-bandgap emiconductor for high-temperature applications: a review;Casady;Solid-State Electron.,1996

3. Present status and future prospect of widegap semiconductor high-power devices;Okumura;Japan. J. Appl. Phys.,2006

4. Silicon carbide microelectromechanical systems for harsh environments;Cheung,2006

5. Kinetics of the 3C-6H polytypic transition in 3C-SiC single crystals: A diffuse X-ray scattering study;Dompoint;J. Appl. Phys.,2011

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