Kinetics of the 3C-6H polytypic transition in 3C-SiC single crystals: A diffuse X-ray scattering study-Reference-Cited by-同舟云学术

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Kinetics of the 3C-6H polytypic transition in 3C-SiC single crystals: A diffuse X-ray scattering study

Published:2011-09 Issue:5 Volume:110 Page:053508
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dompoint D.,Boulle A.,Galben-Sandulache I.,Chaussende D.,Hoa L. T. M.,Ouisse T.,Eyidi D.,Demenet J. L.,Beaufort M. F.,Rabier J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3627371

Reference37 articles.

1. Thermal stability of deep levels between room temperature and 1500 °C in as-grown 3C-SiC

2. Fast and slow carrier recombination transients in highly excited 4H– and 3C–SiC crystals at room temperature

3. Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si (001) interface

4. Residual strains in cubic silicon carbide measured by Raman spectroscopy correlated with x-ray diffraction and transmission electron microscopy

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Machine-learning enhanced thermal stability investigation of single Shockley stacking faults in 4H-SiC;Computational Materials Science;2024-06

2. Effect of PyC-SiC double-layer interface on ablation behaviour of impacted CVD-SiCnws/HfC coating;Corrosion Science;2021-10

3. Crystal phase regulation in noble metal nanocrystals;Chinese Journal of Catalysis;2019-07

4. Oxidation protection of C/C composites: Coating development with thermally stabile SiC@PyC nanowires and an interlocking TaB2-SiC structure;Corrosion Science;2019-03

5. X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(0 0 1) wafers;Journal of Crystal Growth;2019-02

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