Dislocation nucleation in 4H silicon carbide epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. Performance limiting micropipe defects in silicon carbide wafers
2. Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes
3. Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (>250 V) 4H-SiC p/sup +/-n junction diodes. I. DC properties
4. Material characterization need for SiC-based devices
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1. High uniform N-type doping of 4H-SiC homoepitaxy based on a horizontal hot-wall reactor;Journal of Crystal Growth;2024-09
2. Effect of basal plane dislocation structures on single Shockley-type stacking fault expansion rate in 4H-SiC;Japanese Journal of Applied Physics;2024-01-04
3. Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers;Journal of Electronic Materials;2023-03-29
4. Extended Defects in SiC: Selective Etching and Raman Study;Journal of Electronic Materials;2023-02-08
5. Discrimination of dislocations in 4H-SiC by inclination angles of molten-alkali etched pits;Journal of Semiconductors;2022-12-01
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