Effect of thickness-dependent crystal mosaicity and chemical defect on electric properties in yttrium-stabilized epitaxial HfO2 thin films-Reference-Cited by-同舟云学术

Effect of thickness-dependent crystal mosaicity and chemical defect on electric properties in yttrium-stabilized epitaxial HfO2 thin films

Published:2017-03-20 Issue:12 Volume:110 Page:122904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Wenlong¹,Liu Ming¹,Cheng Sheng¹,Zhang Ruyi¹,Ma Rong¹,Wang Hong¹

Affiliation:

1. School of Electronic and Information Engineering & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4978934

Reference28 articles.

1. Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance

2. Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al2O3/HfO2 tunnel oxide

3. Electronic Structure Differences in ZrO2 vs HfO2

4. Crystal structure of Si-doped HfO2

5. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

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2. Domain orientation relationship of orthorhombic and coexisting monoclinic phases of YO1.5-doped HfO2 epitaxial thin films;Japanese Journal of Applied Physics;2018-10-12

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