Domain orientation relationship of orthorhombic and coexisting monoclinic phases of YO1.5-doped HfO2 epitaxial thin films
Author:
Funder
Japan Science and Technology Agency
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=11S/a=11UF16/pdf
Reference34 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Hafnium and zirconium silicates for advanced gate dielectrics
3. Unit-Cell Parameters and Oxygen Displacement of Metastable HfO2-YO1.5 Solid Solutions
4. Ferroelectricity in hafnium oxide thin films
5. Crystal Structure and Equation of State of Cotunnite-Type Zirconia
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