Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al2O3/HfO2 tunnel oxide-Reference-Cited by-同舟云学术

Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al2O3/HfO2 tunnel oxide

Published:2015-06-02 Issue:1 Volume:10 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

El-Atab Nazek,Turgut Berk Berkan,Okyay Ali K,Nayfeh Munir,Nayfeh Ammar

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/article/10.1186/s11671-015-0957-5/fulltext.html

Reference36 articles.

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4. Lee JS, Cho J, Lee C, Kim I, Park J, Kim Y-M, et al. Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties. Nat Nanotechnol. 2007;2:790–5.

5. Hanafi HI, Tiwari S, Khan I. Fast and long retention-time nano-crystal memory. IEEE Trans Electron Devices. 1996;43:1553–8.

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