Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance-Reference-Cited by-同舟云学术

Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance

Published:2016-05-16 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Niu Gang,Calka Pauline,Auf der Maur Matthias,Santoni Francesco,Guha Subhajit,Fraschke Mirko,Hamoumou Philippe,Gautier Brice,Perez Eduardo,Walczyk Christian,Wenger Christian,Di Carlo Aldo,Alff Lambert,Schroeder Thomas

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep25757.pdf

Reference49 articles.

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3. Waser, R. Nanoelectronics and Information Technology 3rd edn, 692 (Wiley-VCH, 2012).

4. Jousseaume, V. et al. Comparative Study of Non-Polar Switching Behaviors of NiO- and HfO2-based Oxide Resistive-RAMs. Solid-State Electron 58, 62–67 (2011).

5. Chiu, F.-C., Li, P.-W. & Chang, W.-Y. Reliability Characteristics and Conduction Mechanisms in Resistive Switching Memory Devices using ZnO Thin Films. Nanoscale Res. Lett. 7, 178 (2012).

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