Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality-Reference-Cited by-同舟云学术

Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

Author:

Lei Dian¹,Wang Wei¹,Zhang Zheng²,Pan Jisheng²,Gong Xiao¹,Liang Gengchiau¹,Tok Eng-Soon³,Yeo Yee-Chia¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576

2. Institute of Material Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602

3. Department of Physics, National University of Singapore, Singapore 117551

Funder

National University of Singapore (NUS)

Ministry of Education - Singapore (MOE)

National Research Foundation Singapore (NRF)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference48 articles.

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