Author:
Coudurier Nicolas,Quintero Andrea,Loup Virginie,Gergaud Patrice,Hartmann Jean-Michel,Mariolle Denis,Reboud Vincent,Rodriguez Philippe
Funder
Agence Nationale de la Recherche
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference42 articles.
1. GeSn technology: Extending the Ge electronics roadmap;Gupta,2011
2. Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by germanium-tin (GeSn);Yang,2012
3. Ternary and quaternary Ni(Si)Ge(Sn) contact formation for highly strained Ge p- and n-MOSFETs;Wirths;Semicond. Sci. Technol.,2015
4. GeSn-based p-i-n photodiodes with strained active layer on a Si wafer;Tseng;Appl. Phys. Lett.,2013
5. GeSn heterojunction LEDs on Si substrates;Oehme;IEEE Photon. Technol. Lett.,2014
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Advances in GeSn alloys for MIR applications;Photonics and Nanostructures - Fundamentals and Applications;2024-02