GeSn-based p-i-n photodiodes with strained active layer on a Si wafer-Reference-Cited by-同舟云学术

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GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

Published:2013-12-02 Issue:23 Volume:103 Page:231907
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tseng H. H.,Li H.,Mashanov V.,Yang Y. J.,Cheng H. H.,Chang G. E.,Soref R. A.,Sun G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4840135

Reference25 articles.

1. Silicon-based optoelectronics

2. Silicon Photonics

3. High-performance Ge-on-Si photodetectors

4. High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform

5. Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon

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1. Impact of Carrier Momentum (k)-Space Separation on GeSn Infrared Photodetectors;IEEE Journal of Selected Topics in Quantum Electronics;2025-01

2. GaAs/GeSn/Ge n–i–p diodes and light emitting diodes formed via grafting;Journal of Vacuum Science & Technology B;2024-07-01

3. CMOS-compatible Self-powered Short-wave Infrared Imagers Based on GeSn Photodetector Arrays;ACS Photonics;2024-06-12

4. Group-IV based pin photodetectors for C-band application;Journal of Vacuum Science & Technology B;2024-04-26

5. High-performance Ge-on-insulator lateral p-i-n waveguide photodetectors for electronic–photonic integrated circuits at telecommunication wavelengths;Optics Letters;2024-02-27

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