High mobility high-k/Ge pMOSFETs with 1 nm EOT -New concept on interface engineering and interface characterization
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/4786613/4796592/04796703.pdf?arnumber=4796703
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mobility enhancement techniques for Ge and GeSn MOSFETs;Journal of Semiconductors;2021-02-01
2. High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation;Nanoscale Research Letters;2019-01-08
3. Ge0.83Sn0.17 P-Channel Metal-Oxide-Semiconductor Field- Effect Transistors: Impact of Sulfur Passivation on Gate Stack Quality;Design, Simulation and Construction of Field Effect Transistors;2018-07-18
4. Electro-Physical Properties of Gate-Last Silicon MOSFETs with Low-Temperature SiOx Ny /HfOx Stack After Ultra-Shallow Fluorine Implantation from RF Plasma;physica status solidi (RRL) - Rapid Research Letters;2018-05-16
5. Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer;Applied Physics Letters;2017-07-31
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