High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation
Author:
Funder
National Natural Science Foundation of China
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1186/s11671-018-2847-0.pdf
Reference19 articles.
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2. Mitard J, Jaeger BD, Leys FE, Hellings G, Martens K, Eneman G, Brunco DP, Loo R, Lin JC, Shamiryan D, Vandeweyer T, Winderickx G, Vrancken E, Yu CH, Meyer KD, Caymax M, Pantisano L, Meuris M, Heyns MM (2008) Record ION/IOFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability. In: IEDM Tech Dig, pp 873–876 https://doi.org/10.1109/IEDM.2008.4796837
3. Vincent B, Loo R, Vandervorst W, Delmotte J, Douhard B, Valev VK, Vanbel M, Verbiest T, Rip J, Brijs B, Conard T, Claypool C, Takeuchi S, Zaima S, Mitard J, Jaeger BD, Dekoster J, Caymax M (2011) Si passivation for Ge pMOSFETs: impact of Si cap growth conditions. Solid State Electron 60:116–121
4. Liu Y, Yan J, Han GQ, Wang HJ, Liu MS, Zhang CF, Cheng BW, Hao Y (2014) Strained Ge0.96Sn0.04 P-channel MOSFETs with in situ low temperature Si2H6 surface passivation. In: ISTDM Tech Dig, pp 107–108 https://doi.org/10.1109/ISTDM.2014.6874637
5. Liao CY, Chen SH, Huang WH, Shen CH, Shieh JM, Cheng HC (2018) High-performance recessed-channel germanium thin-film transistors via excimer laser crystallization. IEEE Electron Device Lett 39:367–370
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