Surface Orientated < 100 > , < 110 > , and < 111 > Silicon-based Double-Gate Tunnel-FET for Linearity and Analog/RF Performance Analysis
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-02232-2.pdf
Reference39 articles.
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3. Quinn J, Kawamoto G, McCombe B (1978) Subband spectroscopy by surface channel tunnelling. Surf Sci. https://doi.org/10.1016/0039-6028(78)90489-2
4. Reddick W, Amaratunga G (1995) Silicon surface tunnel transistor. Applied Physics Letters DOI 10(1063/1):114547
5. Wang PF et al (2004) Complementary tunneling transistor for low power application. Solid State Electron. https://doi.org/10.1016/j.sse.2004.04.006
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