Strained Si and Ge MOSFETs with high-k/metal gate stack for high mobility dual channel CMOS-Reference-Cited by-同舟云学术

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Strained Si and Ge MOSFETs with high-k/metal gate stack for high mobility dual channel CMOS

Published: Issue: Volume: Page:
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Container-title:IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.
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Author:

Weber O.,Bogumilowicz Y.,Ernst T.,Hartmann J.-M.,Ducroquet F.,Andrieu F.,Dupre C.,Clavelier L.,C. Le Royer ,Cherkashin N.,Hytch M.,Rouchon D.,Dansas H.,Papon A.-M.,Carron V.,Tabone C.,Deleonibus S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/10701/33791/01609288.pdf?arnumber=1609288

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ge0.83Sn0.17 P-Channel Metal-Oxide-Semiconductor Field- Effect Transistors: Impact of Sulfur Passivation on Gate Stack Quality;Design, Simulation and Construction of Field Effect Transistors;2018-07-18

2. Carrier scattering in high-κ/metal gate stacks;Journal of Applied Physics;2017-03-21

3. Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality;Journal of Applied Physics;2016-01-14

4. Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations;Journal of Applied Physics;2015-05-07

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