High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc = 0.5 V) III–V CMOS architecture-Reference-Cited by-同舟云学术

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High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc = 0.5 V) III–V CMOS architecture

Published:2010-12 Issue: Volume: Page:
ISSN:
Container-title:2010 International Electron Devices Meeting
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Author:

Pillarisetty R.,Chu-Kung B.,Corcoran S.,Dewey G.,Kavalieros J.,Kennel H.,Kotlyar R.,Le V.,Lionberger D.,Metz M.,Mukherjee N.,Nah J.,Rachmady W.,Radosavljevic M.,Shah U.,Taft S.,Then H.,Zelick N.,Chau R

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5692854/5703218/05703312.pdf?arnumber=5703312

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