Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI pMOSFETs With Al2O3/GeOx Gate Stacks
Author:
Affiliation:
1. School of Micro- and Nano-Electronics, Zhejiang University, Hangzhou, China
2. Soitec, Parc Technologique des Fontaines, Chemin des Franques, Bernin, France
3. Zhijiang Intelligence Institute, Chengdu, China
Funder
Natural Science Foundation of Sichuan Province
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology
Link
http://xplorestaging.ieee.org/ielx7/6245494/10049274/10079114.pdf?arnumber=10079114
Reference39 articles.
1. Channel structure design, fabrication and carrier transport properties of strained-Si/SiGe-on-insulator (strained-SOI) MOSFETs
2. Ge based high performance nanoscale MOSFETs
3. Opportunities and challenges for Ge CMOS – Control of interfacing field on Ge is a key (Invited Paper)
4. Interface-controlled self-align source/drain Ge pMOSFETs using thermally-oxidized GeO2 interfacial layers
5. Ge MOSFETs performance: Impact of Ge interface passivation
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1. Impact of low-temperature and low-pressure mild oxidation after plasma solidification on electrical properties and reliability in ultra-thin SiON MOSFETs;Microelectronic Engineering;2024-09
2. Dual operation modes of the Ge Schottky barrier metal–oxide–semiconductor field-effect transistor;Applied Physics Letters;2024-06-03
3. A Study of the States Kinetics in NBTI and HCI Degradation based on TCAD;2023 6th International Conference on Electronics and Electrical Engineering Technology (EEET);2023-12-01
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