Ge MOSFETs performance: Impact of Ge interface passivation
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx5/5692854/5703218/05703384.pdf?arnumber=5703384
Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Tunable EOT Scaling Down to 0.55 nm for HfO2-Based Gate-Stacks on Ge Substrate by In Situ H2 Plasma Treatment;ECS Journal of Solid State Science and Technology;2024-05-01
2. Effect of Yttrium Treatment on Germanium-Oxide-Based Interfacial Layer of Ge P-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated Through in Situ Plasma-Enhanced Atomic Layer Deposition;IEEE Transactions on Electron Devices;2024-03
3. Heterogeneous 3-D Sequential CFETs With Ge (110) Nanosheet p-FETs on Si (100) Bulk n-FETs;IEEE Transactions on Electron Devices;2024-01
4. Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI pMOSFETs With Al2O3/GeOx Gate Stacks;IEEE Journal of the Electron Devices Society;2023
5. A Study on DC Characteristics of Si-, Ge- and SiC-Based MOSFETs;The Fourth Industrial Revolution and Beyond;2023
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