Carrier‐induced change in index, gain, and lifetime for (InAs)1/(GaAs)4superlattice lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107620
Reference18 articles.
1. A New High-Electron Mobility Monolayer Superlattice
2. Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structures
3. Optical investigation of the band structure of InAs/GaAs short‐period superlattices
4. Molecular‐beam epitaxial growth of InAs/GaAs superlattices on GaAs substrates and its application to a superlattice channel modulation‐doped field‐effect transistor
5. Effect of indium replacement by gallium on the energy gaps of InAs/GaAs thin‐layer structures
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2. High-Speed Lasers;Semiconductor Lasers I;1999
3. n-type conductivity in c-BN films deposited by microwave plasma-assisted chemical vapour deposition;Semiconductor Science and Technology;1995-11-01
4. The performances of (InAs)/sub 1//(GaAs)/sub 2/ short-period superlattice strained single-quantum-well laser on GaAs substrate;IEEE Journal of Quantum Electronics;1994-04
5. Growth and fabrication of high-performance 980-nm strained InGaAs quantum-well lasers for erbium-doped fiber amplifiers;IEEE Journal of Quantum Electronics;1994
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