Optical investigation of the band structure of InAs/GaAs short‐period superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101832
Reference8 articles.
1. (InAs)1(GaAs)1Layered Crystal Grown by MOCVD
2. Luminescence investigations of highly strained‐layer InAs‐GaAs superlattices
3. Atomic layer epitaxy of the Ga‐As‐In‐As superalloy
4. Structural and optical properties of high quality InAs/GaAs short‐period superlattices grown by migration‐enhanced epitaxy
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. X‐ray diffraction characterization of highly strained InAs and GaAs layers on InP grown by metalorganic vapor‐phase epitaxy;Journal of Applied Physics;1994-03
2. Growth and fabrication of high-performance 980-nm strained InGaAs quantum-well lasers for erbium-doped fiber amplifiers;IEEE Journal of Quantum Electronics;1994
3. Growth of high quality AlGaAs/GaAs heterostructures by molecular beam epitaxy for photonic and electronic device applications;Thin Solid Films;1993-08
4. Temperature characteristics of (InAs)1/(GaAs)4short‐period superlattices quantum well laser;Applied Physics Letters;1993-04-26
5. Performance characteristics of (InAs)1/(GaAs)nshort-period superlattice quantum-well laser;Electronics Letters;1992-12-03
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