Growth of high quality AlGaAs/GaAs heterostructures by molecular beam epitaxy for photonic and electronic device applications
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference66 articles.
1. Impurity trapping, interface structure, and luminescence of GaAs quantum wells grown by molecular beam epitaxy
2. GaAs/Ga1−xAlxAs and Ga1−xAlxAs/GaAs heterointerfaces grown by molecular beam epitaxy
3. Realization of high mobility in inverted AlxGa1−xAs/GaAs heterojunctions
4. Secondary ion mass spectrometry study of oxygen accumulation at GaAs/AlGaAs interfaces grown by molecular beam epitaxy
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Enhanced terahertz ISBT in GaAsBi/AlGaAs quantum well: impact of doping modulation;Arab Journal of Basic and Applied Sciences;2024-07-30
2. Interface Recombination in Ga- and N-Polar GaN/(Al,Ga)N Quantum Wells Grown by Molecular Beam Epitaxy;Physical Review Applied;2022-04-15
3. Facet-Related Non-uniform Photoluminescence in Passivated GaAs Nanowires;Frontiers in Chemistry;2020-12-07
4. Structural Optimization and Temperature-Dependent Electrical Characterization of GaAs Single-Junction Solar Cells;Journal of the Korean Physical Society;2020-06
5. Fabrication Processes for Electrical and Electro-Optical Thin Films;Introduction to Surface Engineering and Functionally Engineered Materials;2011-09-30
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3