Molecular‐beam epitaxial growth of InAs/GaAs superlattices on GaAs substrates and its application to a superlattice channel modulation‐doped field‐effect transistor-Reference-Cited by-同舟云学术

Molecular‐beam epitaxial growth of InAs/GaAs superlattices on GaAs substrates and its application to a superlattice channel modulation‐doped field‐effect transistor

Published:1991-04 Issue:7 Volume:69 Page:3941-3949
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Toyoshima H.,Onda K.,Mizuki E.,Samoto N.,Kuzuhara M.,Itoh T.,Okamoto A.,Anan T.,Ichihashi T.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.348454

Reference32 articles.

1. A New High-Electron Mobility Monolayer Superlattice

2. Low Field Transport Properties of Two-Dimensional Electron Gas in Selectively Doped N-AlGaAs/GaInAs/GaAs Pseudomorphic Structures

3. Electron and hole mobility in modulation doped GaInAs-AlInAs strained layer superlattice

4. Optical characterization of InGaAs‐InAlAs strained‐layer superlattices grown by molecular beam epitaxy

5. Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate length

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