Electron effective mass determination in asymmetric modulation-doped field-effect transistor heterostructures using InxGa1−xAs quantum well and InAs–GaAs superlattice channels-Reference-Cited by-同舟云学术

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Electron effective mass determination in asymmetric modulation-doped field-effect transistor heterostructures using InxGa1−xAs quantum well and InAs–GaAs superlattice channels

Published:1998-05 Issue:5 Volume:23 Page:1019-1025
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Cury L.A.,Matinaga F.M.,Freire S.L.S.,Moreira M.V.B.,Beerens J.,Py M.A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 4.3.7 References for 4.3;Landolt-Börnstein - Group III Condensed Matter

2. 4.3.4 Other well materials;Landolt-Börnstein - Group III Condensed Matter

3. 4.3.3 InAs and In{1-y}Ga{y}As;Landolt-Börnstein - Group III Condensed Matter

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