Cold source field-effect transistors: Breaking the 60-mV/decade switching limit at room temperature

Author:

Wang Saisai,Wang JinORCID,Zhi Ting,Xue Junjun,Chen Dunjun,Wang Lianhui,Zhang Rong

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference192 articles.

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2. Tunnel field-effect transistors as energy-efficient electronic switches;Ionescu;Nature,2011

3. Low-voltage tunnel transistors for beyond CMOS logic;Seabaugh;Proc. IEEE,2010

4. In quest of the next switch: prospects for greatly reduced power dissipation in a successor to the silicon field-effect transistor;Theis;Proc. IEEE,2010

5. Few-layer black phosporous PMOSFETs with BN/Al2O3 bilayer gate dielectric: achieving Ion=850 μA/μm, gm=340 μs/μm, and Rc=0.58 kω⋅μm;Yang,2016

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