Electron and hole mobility in modulation doped GaInAs-AlInAs strained layer superlattice
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. InxGa1−xAs−InyGa1−yAsstrained-layer superlattices: A proposal for useful, new electronic materials
2. Strained‐layer superlattices from lattice mismatched materials
3. A GaAsxP1−x/GaP strained‐layer superlattice
4. Electron mobilities in In0.2Ga0.8As/GaAs strained‐layer superlattices
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1. Preliminary design of a tensile-strained p-type Si/SiGe quantum well infrared photodetector;Semiconductor Science and Technology;2008-02-07
2. Compressively strainedp-type InGaAs/AlGaAs quantum-well infrared photodetectors;Journal of Applied Physics;2002-11-15
3. Strained p-type InGaAs/AlGaAs multiple quantum well infrared photodetectors;SPIE Proceedings;2002-09-18
4. Six-band k/spl middot/p approach to the effects of doping on energy dispersion in p-type strained In/sub 0.15/Ga/sub 0.85/As-Al/sub 0.33/Ga/sub 0.67/As quantum-well structures;IEEE Journal of Quantum Electronics;2000-07
5. Optical properties of p-type InGaAs/AlGaAs multiple quantum well structures;Microelectronic Engineering;2000-05
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