Effect of indium replacement by gallium on the energy gaps of InAs/GaAs thin‐layer structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347542
Reference20 articles.
1. Photoluminescence from highly-flat-interface InAs/GaAs heterostructures grown by flow-rate modulation epitaxy
2. InAs monomolecular plane in GaAs grown by flow‐rate modulation epitaxy
3. High quality ultrathin InAs/GaAs quantum wells grown by standard and low‐temperature modulated‐fluxes molecular beam epitaxy
4. Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular-beam epitaxy
5. Replacement of group‐III atoms on the growing surface during migration‐enhanced epitaxy
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3. Self-Assembly Growth of In-Rich InGaAs Core–Shell Structured Nanowires with Remarkable Near-Infrared Photoresponsivity;Nano Letters;2017-11-10
4. Blueshifts of emission energy from InAs quantum dots in GaAs matrix due to narrowed interdot spacing: a token of the integrity of a nanostructure;Applied Physics A;2005-09
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