InAs monomolecular plane in GaAs grown by flow‐rate modulation epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343508
Reference12 articles.
1. Flow-Rate Modulation Epitaxy of GaAs
2. Modulation Doped n-AlGaAs/GaAs Heterostructures Grown by Flow-rate Modulation Epitaxy
3. Efficient Si Planar Doping in GaAs by Flow-Rate Modulation Epitaxy
4. Electron conduction in GaAs atomic layer doped with Si
5. Abruptp‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy
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