Electron conduction in GaAs atomic layer doped with Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340449
Reference11 articles.
1. GaAs sawtooth superlattice laser emitting at wavelengths λ>0.9 μm
2. The δ-Doped Field-Effect Transistor
3. Self‐aligned enhancement‐mode and depletion‐mode GaAs field‐effect transistors employing the δ‐doping technique
4. Complex free‐carrier profile synthesis by ’’atomic‐plane’’ doping of MBE GaAs
5. Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
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1. Conductivity and persistent photoconductivity in GaAs epitaxial films containing single and double delta-doped layers;Journal of Experimental and Theoretical Physics;1998-02
2. Preparation and Properties of Edge QW Delta Doped InGaAs/GaAs FET;Heterostructure Epitaxy and Devices — HEAD’97;1998
3. Recent progress in δ-doping of III–V semiconductors grown by metal organic vapour phase epitaxy;Solid-State Electronics;1997-09
4. Carrier Concentration Saturation of Double Si Doping Layers in GaAs;Japanese Journal of Applied Physics;1996-09-15
5. Comparative Study of C–V and Transconductance of a Si δ-Doped GaAs FET Structure;Japanese Journal of Applied Physics;1996-04-15
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