Defect properties of solar cells with layers of GaP based dilute nitrides grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

Defect properties of solar cells with layers of GaP based dilute nitrides grown by molecular beam epitaxy

Published:2020-07-14 Issue:2 Volume:128 Page:023105
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Baranov Artem I.¹²³⁴^ORCID,Gudovskikh Alexander S.¹²^ORCID,Egorov Anton Yu.¹^ORCID,Kudryashov Dmitry A.¹^ORCID,Le Gall Sylvain³⁴^ORCID,Kleider Jean-Paul³⁴^ORCID

Affiliation:

1. Saint Petersburg National Research Academic University RAS, 194021 Saint Petersburg, Russia

2. Saint Petersburg Electrotechnical University, 197376 Saint Petersburg, Russia

3. Université Paris-Saclay, CentraleSupélec, CNRS, Laboratoire de Génie Electrique et Electronique de Paris, 91192 Gif-sur-Yvette, France

4. Sorbonne Université, CNRS, Laboratoire de Génie Electrique et Electronique de Paris, 75252 Paris, France

Funder

Russian Science Foundation

Council on grants of the President of the Russian Federation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5134681

Reference49 articles.

1. Four-Junction Wafer-Bonded Concentrator Solar Cells

2. Efficiency limits for single-junction and tandem solar cells

3. Properties of Group-IV, III-V and II-VI Semiconductors

4. Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x

5. Radiative recombination mechanism in GaNxP1−x alloys

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