Modulation Doped n-AlGaAs/GaAs Heterostructures Grown by Flow-rate Modulation Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Flow Rate Modulated Vapor Epitaxy;Reference Module in Materials Science and Materials Engineering;2016
2. Flow Rate Modulated Vapor Epitaxy;Encyclopedia of Materials: Science and Technology;2001
3. Flatness improvement of InP using phosphine modulation metalorganic chemical vapor deposition;Applied Physics A: Materials Science & Processing;1997-06-01
4. Flatness Improvement of GaAs Observed by Atomic Force Microscopy Using Flow Rate Modulation Epitaxy;Japanese Journal of Applied Physics;1997-01-15
5. Flow rate modulation epitaxy of AlGaAs/GaAs quantum wires on nonplanar substrate;Applied Physics Letters;1995-03-20
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