Photoluminescence from highly-flat-interface InAs/GaAs heterostructures grown by flow-rate modulation epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference1 articles.
1. Photoluminescence from InGaAs‐GaAs strained‐layer superlattices grown by flow‐rate modulation epitaxy
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of indium replacement by gallium on the energy gaps of InAs/GaAs thin‐layer structures;Journal of Applied Physics;1991-06
2. Electronic structure of an InAs monomolecular plane in GaAs;Physical Review B;1990-08-15
3. Modulation of quantized levels of GaAs/AlGaAs quantum wells by InAs monomolecular plane insertion;Applied Physics Letters;1990-04-16
4. Comment on ‘‘Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor deposition’’[Appl. Phys. Lett.53, 495 (1988)];Applied Physics Letters;1989-10-16
5. Growth of InAs by MOVPE: A comparative study using arsine, tertiarybutylarsine and phenylarsine;Journal of Crystal Growth;1989-09
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