High quality ultrathin InAs/GaAs quantum wells grown by standard and low‐temperature modulated‐fluxes molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99859
Reference11 articles.
1. Nucleation and strain relaxation at the InAs/GaAs(100) heterojunction
2. Growth of a (GaAs)n/(InAs)nSuperlattice Semiconductor by Molecular Beam Epitaxy
3. Inhomogeneous lattice distortion in the heteroepitaxy of InAs on GaAs
4. First stages of the MBE growth of InAs on (001)GaAs
5. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices
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