Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix-Reference-Cited by-同舟云学术

Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix

Published:2018-12-21 Issue:23 Volume:124 Page:235303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kumar Rahul¹^ORCID,Maidaniuk Yurii¹,Kuchuk Andrian¹^ORCID,Saha Samir K.¹,Ghosh Pijush K.²,Mazur Yuriy I.¹^ORCID,Ware Morgan E.²^ORCID,Salamo Gregory J.¹

Affiliation:

1. Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA

2. Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5053412

Reference28 articles.

1. Coupled ultrathin InAs layers in GaAs as a tool for the determination of band offsets

2. Multi-stack InAs/InGaAs sub-monolayer quantum dots infrared photodetectors

3. Quantum Engineering of InAs/GaAs Quantum Dot Based Intermediate Band Solar Cells

4. Arrays of Two-Dimensional Islands Formed by Submonolayer Insertions: Growth, Properties, Devices

5. Tight-binding approach to excitons bound to monolayer impurity planes: Strong radiative properties of InAs in GaAs

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