Cathodoluminescence of Ultrathin InAs Layers Embedded in GaAs Matrix

Abstract

Ultrathin InAs layers with different thicknesses, from 0.75 to 1.4 monolayer, are grown in the GaAs matrix by molecular beam epitaxy on GaAs (001) substrates. For sub-monolayer heterostructures, islands or segregations exist during the growth process. Taking advantage of the high spatial resolution of focused electron beams, cathodoluminescence measurements obtain a smaller excitation spot than conventional photoluminescence. Based on the change on the peak position, line width, and intensity, cathodoluminescence spectra indicate that the size, geometry, and roughness develop with the InAs content. Moreover, spatial discontinuities of ultrathin InAs layers are observed on spectrum images and transmission electron microscopy images. This research reveals the correlation between the optical and structural properties of ultrathin InAs layers.