Coupled ultrathin InAs layers in GaAs as a tool for the determination of band offsets-Reference-Cited by-同舟云学术

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Coupled ultrathin InAs layers in GaAs as a tool for the determination of band offsets

Published:1997-06 Issue:4 Volume:21 Page:527-532
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Brübach J.,Silov A.Yu.,Haverkort J.E.M.,van der Vleuten W.,Wolter J.H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cathodoluminescence of Ultrathin InAs Layers Embedded in GaAs Matrix;Crystals;2022-08-31

2. Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix;Journal of Applied Physics;2018-12-21

3. Analytical expression for the quantum dot contribution to the quasistatic capacitance for conduction band characterization;Journal of Applied Physics;2008-07-15

4. The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films;Surface Science Reports;2004-05

5. Magnetoluminescence of highly excited InAs/GaAs self-assembled quantum dots;Physical Review B;2000-09-15

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