Replacement of group‐III atoms on the growing surface during migration‐enhanced epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346640
Reference8 articles.
1. Migration-Enhanced Epitaxy of GaAs and AlGaAs
2. Growth Mechanism of GaAs during Migration-Enhanced Epitaxy at Low Growth Temperatures
3. Step-Flow Growth on Vicinal GaAs Surfaces by Migration-Enhanced Epitaxy
4. Development of a Detector of Variation of Underground Water Level Using Ultrasound
5. Spontaneous growth of coherent tilted superlattice on vicinal (100) GaAs substrates
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