Molecular Beam Epitaxy Growth of GaAs/InAs Core–Shell Nanowires and Fabrication of InAs Nanotubes
Author:
Affiliation:
1. Jülich Aachen Research Alliance for Fundamentals of Future Information Technology (JARA-FIT), Germany
2. II. Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/nl302502b
Reference39 articles.
1. Surround-gated vertical nanowire quantum dots
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4. InAs/InP Radial Nanowire Heterostructures as High Electron Mobility Devices
5. Long range epitaxial growth of prismatic heterostructures on the facets of catalyst-free GaAs nanowires
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