Atomic Layer Deposition and Strain Analysis of Epitaxial GaN-ZnO Core–Shell Nanowires-Reference-Cited by-同舟云学术

Atomic Layer Deposition and Strain Analysis of Epitaxial GaN-ZnO Core–Shell Nanowires

Published:2023-07-27 Issue:15 Volume:23 Page:6920-6926
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Kolhep Maximilian¹^ORCID,Pantle Florian²^ORCID,Karlinger Monika²,Wang Di³^ORCID,Scherer Torsten³,Kübel Christian³⁴^ORCID,Stutzmann Martin²,Zacharias Margit¹

Affiliation:

1. Laboratory for Nanotechnology, Department of Microsystems Engineering, University of Freiburg, Freiburg, 79110, Germany

2. Walter Schottky Institut and Physics Department, Technische Universität München, Garching, 85748, Germany

3. Karlsruhe Nano and Micro Facility (KNMF) and Institute of Nanotechnology (INT), Karlsruhe Institute of Technology (KIT), Eggenstein-Leopoldshafen, 76344, Germany

4. Department of Materials and Earth Sciences, Technical University Darmstadt, Darmstadt, 64287, Germany

Funder

Deutsche Forschungsgemeinschaft

International Graduate School of Science and Engineering

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.3c01531

Reference28 articles.

1. Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices