Comparison of the Strain-modified Band Gap Energies of Truncated and Untruncated InAs Quantum Dots in GaAs Matrix at Varying Inter-dot Spacings-Reference-Cited by-同舟云学术

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Comparison of the Strain-modified Band Gap Energies of Truncated and Untruncated InAs Quantum Dots in GaAs Matrix at Varying Inter-dot Spacings

Published:2004-12-15 Issue:12 Volume:73 Page:3378-3383
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Shin Hyunho¹,Yoon Euijoon¹,Yoo Yo-Han²,Lee Woong³

Affiliation:

1. School of Materials Science and Engineering, Seoul National University, Shillim-dong, Seoul 151-744, Republic of Korea

2. First Systems Development Centre, Agency for Defence Development, P.O. Box 35-1, Yuseong, Daejeon 305-600, Republic of Korea

3. Department of Materials Science and Engineering, Yonsei University, Shinchon-dong, Seoul 120-749, Republic of Korea

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

http://journals.jps.jp/doi/pdf/10.1143/JPSJ.73.3378

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanometer-scale measurements of electronic states in InAs∕GaAs quantum dots;Journal of Applied Physics;2009-07

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