Nanometer-scale measurements of electronic states in InAs∕GaAs quantum dots
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3158560
Reference28 articles.
1. 1.3 [micro sign]m InAs∕GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density
2. 1.3-/spl mu/m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
3. High-detectivity, normal-incidence, mid-infrared (λ∼4 μm)InAs/GaAs quantum-dot detector operating at 150 K
4. Nonuniform Composition Profile inIn0.5Ga0.5AsAlloy Quantum Dots
5. Reversed truncated cone composition distribution of In0.8Ga0.2As quantum dots overgrown by an In0.1Ga0.9As layer in a GaAs matrix
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1. Formation and properties of InGaN QDs: Influence of substrates;Applied Physics Letters;2019-02-11
2. Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets;Applied Physics Letters;2013-08-19
3. Spatial Variation of Available Electronic Excitations within Individual Quantum Dots;Nano Letters;2013-01-04
4. Size dependent bandgap of molecular beam epitaxy grown InN quantum dots measured by scanning tunneling spectroscopy;Journal of Applied Physics;2011-12
5. Influence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlattices;Journal of Applied Physics;2011-10
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