Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4818270
Reference27 articles.
1. Band edge alignment of pseudomorphicGaAs1−ySbyon GaAs
2. Band anticrossing in highly mismatched III V semiconductor alloys
3. Energy gap variation in GaAsxSb1-x alloys
4. Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells
5. Formation and Optical Characteristics of Type-II Strain-Relieved GaSb/GaAs Quantum Dots by Using an Interfacial Misfit Growth Mode
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1. Influence of strain and dislocations on GaSb/GaAs quantum dots: From nested to staggered band alignment;Journal of Applied Physics;2022-02-28
2. Effect of strain on band alignment of GaAsSb/GaAs quantum wells;Journal of Applied Physics;2017-07-28
3. Electronic structure of Mn-doped InAs nanowires in the magnetic field;Superlattices and Microstructures;2016-12
4. Ordered horizontal Sb2Te3 nanowires induced by femtosecond lasers;Applied Physics Letters;2014-11-17
5. Influence of Sb incorporation on InGaAs(Sb)N/GaAs band alignment;Applied Physics Letters;2014-10-06
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