Effect of strain on band alignment of GaAsSb/GaAs quantum wells
Author:
Affiliation:
1. Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109, USA
2. Materials Science and Engineering Department, University of Michigan, Ann Arbor, Michigan 48109, USA
Funder
National Science Foundation (NSF)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4994305
Reference38 articles.
1. Band edge alignment of pseudomorphicGaAs1−ySbyon GaAs
2. Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells
3. Influence of Sb/As soak times on the structural and optical properties of GaAsSb/GaAs interfaces
4. GaAs-substrate-based long-wave active materials with type-II band alignments
5. Optical characterization of a GaAsSb/GaAs/GaAsP strain-compensated quantum well structure grown by metal-organic vapor phase epitaxy
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1. Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure;Applied Physics Letters;2023-04-24
2. Dependence of the radiative lifetime on the type-II band offset in GaAsxSb1−x/GaAs quantum dots including effects of photoexcited carriers;Journal of Applied Physics;2022-10-07
3. Influence of strain and dislocations on GaSb/GaAs quantum dots: From nested to staggered band alignment;Journal of Applied Physics;2022-02-28
4. Electronic band structure and optical properties of GaAsSb/GaAs for optoelectronic device applications: A 14 band k.p study;Optical Materials;2021-02
5. Half-occupation approach for the ab initio calculation of strained Ga(AsSb)/GaAs valence band offsets;AIP Advances;2020-04-01
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